Part Number Hot Search : 
HD408L 02P01240 STP5N30L BSD816SN 05100 MAX2410 H101M P010239
Product Description
Full Text Search
 

To Download AO9926A Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  symbol v ds v gs i dm t j , t stg symbol typ max 48 62.5 74 110 r jl 35 40 absolute maximum ratings t a =25c unless otherwise noted parameter maximum units drain-source voltage 20 v gate-source voltage 8 v a t a =70c 6 pulsed drain current b 40 continuous drain current a t a =25c i d 7 t a =70c 1.44 w power dissipation t a =25c p d 2 steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a AO9926A features v ds (v) = 20v i d = 7a r ds(on) < 26m ? (v gs = 4.5v) r ds(on) < 33m ? (v gs = 2.5v) r ds(on) < 42m ? (v gs = 1.8v) the AO9926A uses advanced trench technology to provide excellent r ds(on) and low gate charge. they offer operation over a wide gate drive range from 1.8v to 8v. the two devices may be used individually, in parallel or to form a bidirectional blocking switch. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 g1 d1 s1 g2 d2 s2 soic-8 dual n-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 6
AO9926A symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.3 0.5 0.8 v i d(on) 30 a 21.6 26 t j =125c 29.2 36 v gs =2.5v, i d =5a 26.4 33 m ? 33.3 42 m ? g fs 22 s v sd 0.76 1 v i s 3a c iss 1050 pf c oss 163 pf c rss 129 pf r g 4 ? q g 15.2 nc q gs 1nc q gd 4nc t d(on) 6.5 ns t r 9ns t d(off) 56.5 ns t f 13.2 ns t rr body diode reverse recovery time 21 ns q rr body diode reverse recovery charge 7.1 nc i f =5a, di/dt=100a/ s i f =5a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =16v, v gs =0v a gate-body leakage current v ds =0v, v gs =8v gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v r ds(on) static drain-source on-resistance v gs =4.5v, i d =7a m ? v gs =1.8v, i d =4a v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =5a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =10v, f=1mhz output capacitance reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =7a gate source charge gate drain charge turn-on delaytime v gs =5v, v ds =10v, r l =1.5 ? , r gen =3 ? a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 6
AO9926A typical electrical and thermal characteristics v ds =16v, v gs =0v 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 4.5v 0 4 8 12 16 20 0.4 0.8 1.2 1.6 2 2.4 v gs(volts) figure 2: transfer characteristics i d (a) 10 15 20 25 30 35 40 45 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =4.5v 10 20 30 40 50 60 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v i d =7a v gs =1.8v v gs =1.8v 25c 125c i d =7a www.freescale.net.cn 3 / 6
AO9926A typical electrical and thermal characteristic s v ds =16v, v gs =0v 0 1 2 3 4 5 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 p s v ds =15v i d =7a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 6
q e q h l aaa b e1 c e d a a2 a1 symbols 0.050 bsc 0.50 1.27 8 0.10 0.10 5.00 6.20 4.00 0.51 0.25 --- 1.55 --- 5.80 0 0.25 0.40 --- --- --- --- --- 1.27 bsc 0.19 3.80 4.80 1.45 0.33 --- 0.00 --- --- --- --- 1.50 1.45 --- --- 0.228 0.010 0.016 --- 0 --- --- --- --- 0.057 0.007 0.013 --- 0.150 0.189 0.000 --- --- --- --- 0.059 0.057 --- 0.244 8 0.020 0.050 0.004 0.010 0.157 0.197 0.061 0.020 --- 0.004 dimensions in inches dimensions in millimeters max min nom min nom max so-8 package data note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.10 mm (4 mil) unless otherwise specified 3. coplanarity : 0.10 mm 4. dimension l is measured in gage plane recommended land pattern f a y w l c package marking description note: logo - aos logo 9926a - part number code. f - fab location a - assembly location y - year code w - week code. l c - assembly lot code so-8 part no. code logo 9 9 2 6 a unit: mm rev. a AO9926A part no. code 9926a www.freescale.net.cn 5 / 6
so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation www.freescale.net.cn 6 / 6


▲Up To Search▲   

 
Price & Availability of AO9926A

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X